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Ferroelectric Compute-in-Memory Integrated Devices and Chip Technology
编号:S000073145 刷新日期: 有效日期至:2030-01-01 浏览:3 对接邀请:0
意向价格: 面议
行业分类: 科学研究和技术服务业
所在区域:中国 - 江苏 技术领域:人工智能 - 其它
转让类型:科技服务
专利类型:发明专利 技术成熟度:可以量产
供应描述

This technology addresses the issue of separated training and inference in computing-inmemory systems. It develops integrated training-inference hardware based on dual ferroelectric gates, which can significantly reduce power consumption, increase speed, and enhance endurance, thereby providing support for edge intelligence.

Technology provider:Nanjing University of Posts and Telecommunications

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机构地址:Floor 4,B Building of Redbud Flower Business Center,Xinchangxilu Road,Jinfeng District,Yinchuan City,Ningxia,China 查看地图
China-Arab States Technology Transfer Center
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