This memristor addresses the uncontrollable conductive filaments and unstable electrical performance of traditional oxide devices by using perovskite MAPbI3 as the resistive layer and inserting an Nb2C barrier layer between it and the top electrode. Combined with a top electrode protective layer, this design optimizes controllable conductive filament, enhances device stability, and reduces power consumption. The preparation process is simple, efficient, and lowcost, providing a reliable solution for brain-like computing systems.

Technology provider:Nanjing University of Posts and Telecommunications