This technology focuses on the substrate laser lift-off (LLO) process in MicroLED chip manufacturing. It utilizes ultraviolet laser irradiation at the sapphire/GaN interface to form a hightemperature decomposition layer, enabling low-damage substrate separation of micron-scale chips. This process breaks through the limitations of traditional ball planting and wire bonding for miniaturized chips, adopts a vertical structure to enhance luminous efficiency, and is compatible with various material systems such as GaN/Sapphire, ITO, and ZnO. It provides support for next-generation high-density micro-display technology.

Technology provider:Institute of Semiconductors, Chinese Academy of Sciences