This technology develops GaAs six-junction laser photovoltaic cells, featuring high-voltage/low-current characteristics and broad beam adaptability through tunnel junction vertical series structure. Optimized for 808nm lasers, it achieves 50% conversion efficiency at 1W input (domestically leading, internationally advanced), with open-circuit voltage >6V. Large-area components are applicable to high-power laser wireless power supply systems.

Technology provider:Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences