This technology addresses thermal mismatch and layer defects in SiC-based GaN epitaxy by using PECVD to prepare AlN/SiN buffer layers at low temperatures, replacing high-cost MOCVD processes. By optimizing reactant ratios and deposition conditions, it successfully produces high-quality buffer films with low internal stress or controllable compressive stress, improving GaN epitaxial quality and providing a low-cost solution for manufacturing SiC-based power devices.

Technology provider:Nanjing University of Posts and Telecommunications